2sc2412k / 2sc4081 / 2sc4617 / transistors 2sc5658 / 2sC1740S general purpose transistor (50v, 0.15a) 2sc2412k / 2sc4081 / 2sc4617 / 2sc5658 / 2sC1740S ! features 1) low cob. cob=2.0pf (typ.) 2) complements the 2sa1037ak / 2sa1576a / 2sa1774h / 2sa2029 / 2sa933as. ! ! ! ! structure epitaxial planar type npn silicon transistor ! ! ! ! external dimensions (units : mm) rohm : vmt3 2sc5658 rohm : spt eiaj : sc-72 2sC1740S (1) emitter (2) collector (3) base 3 0.2 (15min.) 4 0.2 2 0.2 0.45 0.5 0.45 5 (1) (2) (3) ? 0.05 +0.15 +0.15 ? 0.05 2.5 +0.4 ? 0.1 3min. * denotes h fe 2sc2412k 2sc4617 rohm : emt3 eiaj : sc-75a jedec : sot-416 abbreviated symbol: b* rohm : umt3 eiaj : sc-70 jedec : sot-323 2sc4081 abbreviated symbol: b* abbreviated symbol: b* (1) base (2) emitter (3) collector rohm : smt3 eiaj : sc-59 jedec : sot-346 abbreviated symbol: b* (1) emitter (2) base (3) collector each lead has same dimensions 0.8 0.15 0~0.1 0.3min. 1.1 ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 1.9 0.95 0.95 (1) emitter (2) base (3) collector each lead has same dimensions 1.25 2.1 0.3 0.15 0~0.1 0.1min. ( 3 ) 0.9 0.7 0.2 0.65 ( 2 ) 2.0 1.3 ( 1 ) 0.65 (1) emitter (2) base (3) collector 0.7 0.15 0.1min. 0.55 0~0.1 0.2 1.6 1.6 1.0 0.3 0.8 ( 2 ) 0.5 0.5 ( 3 ) 0.2 ( 1 ) 0~0.1 (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.4 0.4 1.2 0.8 0.2 0.15max. 0.2 ( 2 ) ( 1 ) ! ! ! ! absolute maximum (ta=25 c) collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature parameter v cbo v ceo v ebo p c tj tstg 60 v v v a w c c 50 7 0.15 i c 0.2 0.15 0.3 2sc2412k, 2sc4081 2sC1740S 2sc4617, 2sc5658 150 ? 55~ + 150 symbol limits unit www.datasheet.in
2sc2412k / 2sc4081 / 2sc4617 / transistors 2sc5658 / 2sC1740S ! ! ! ! electrical characteristics (ta=25 c) collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage output capacitance parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. 60 50 7 ? ? 120 ? ? ? ? ? ? ? ? ? ? 180 2 ? ? ? 0.1 0.1 560 0.4 ? 3.5 vi c =50 a i c =1ma i e =50 a v cb =60v v eb =7v v ce =6v, i c =1ma i c /i b =50ma/5ma v ce =12v, i e = ? 2ma, f=100mhz v ce =12v, i e =0a, f=1mhz v v a a ? v mhz pf typ. max. unit conditions transition frequency ! ! ! ! packaging specifications and h fe package code taping bulk basic ordering unit (pieces) t146 t106 3000 3000 ? ? qrs h fe qrs 2sc2412k 2sc4081 ?? tl 3000 ? ? t2l 8000 ? ? ? qrs 2sc4617 tp 5000 ? ? ? ??? ? qrs 2sc5658 ? ??? qrs 2sC1740S type h fe values are classified as follows : item q r s h fe 120~270 180~390 270~560 ! ! ! ! electrical characterristic curves fig.1 grounded emitter propagation characteristics 0 0.1 0.2 0.5 2 20 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 5 10 ta = 100 c v ce =6v collector current : i c (ma) base to emitter voltage : v be (v) 25 c ? 55 c fig.2 grounded emitter output characteristics ( ) 0 20 40 60 80 100 0.4 0.8 1.2 1.6 2.0 0 collector current : i c (ma) collector to emitter voltage : v ce (v) 0.05ma 0.10ma 0.15ma 0.25ma 0.30ma 0.35ma 0.20ma ta=25 c i b =0a 0.40ma 0.50ma 0.45ma 0 0 2 8 10 4 8 12 16 4 6 20 i b =0a ta=25 c collector current : i c (ma) collector to emitter voltage : v ce (v) 3 a 6 a 9 a 12 a 15 a 18 a 21 a 24 a 27 a 30 a fig.3 grounded emitter output characteristics ( ? ) www.datasheet.in
2sc2412k / 2sc4081 / 2sc4617 / transistors 2sc5658 / 2sC1740S 0.2 20 10 0.5 1 2 5 10 20 50 100 200 50 100 200 500 v ce =5v 3v 1v ta=25 c fig.4 dc current gain vs. collector current ( ) dc current gain : h fe collector current : i c (ma) 0.2 0.5 1 2 5 10 20 50 100 200 20 10 50 100 200 500 25 c ? 55 c ta=100 c v ce = 5v fig.5 dc current gain vs. collector current ( ? ) dc current gain : h fe collector current : i c (ma) fig. 6 collector-emitter saturation voltage vs. collector current 0.2 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =50 20 10 ta=25 c fig.7 collector-emitter saturation voltage vs. collector current ( ) 0.2 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =10 ta=100 c 25 c ? 55 c fig.8 collector-emitter saturation voltage vs. collector current ( ? ) collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 i c /i b =50 ta=100 c 25 c ? 55 c fig.9 gain bandwidth product vs. emitter current 50 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 100 200 500 ta=25 c v ce =6v emitter current : i e (ma) transition frequency : f t (mhz) fig.10 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob ( pf) emitter input capacitance : cib ( pf) 0.2 0.5 1 2 5 10 20 50 1 2 5 10 20 cob ta=25 c f = 1mhz i e =0a i c =0a cib fig.11 base-collector time constant vs. emitter current ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 base collector time constant : ccr bb' (ps) emitter current : i e (ma) 10 20 50 100 200 ta=25 c f=32mh z v cb =6v www.datasheet.in
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